, d nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRFF330 3.5a, 400v, 1.000 ohm, n-channel power mosfet this n-channel enhancement mode silicon gate power field effect transistor is an advanced power mosfet designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. all of these power mosfets are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. features ? 3.5a, 400v ' rds(0n)= 1.00012 ? single pulse avalanche energy rated ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ordering information part number IRFF330 package to-205af brand IRFF330 note: when ordering, include the entire part number. symbol packaging jedec to-205af nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRFF330 absolute maximum ratings tc = 25c, unless otherwise specified drain to source voltage (note 1 ) drain to gate voltage (rgs = 20k3) (note 1 ) continuous drain current pulsed drain current (note 3) gate to source voltage maximum power dissipation linear derating factor single pulse avalanche energy rating (note 4) operating and storage temperature range maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s package body for 10s, see techbrief 334 vds ? ? vdgr .. id ? ? 'dm vgs ..pd eas ? tj.tstg tl tpkg IRFF330 400 400 3.5 14 20 25 02 300 -55 to 150 300 260 units v v a a v w w/c mj c c c caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: = 250cto125c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage gate to threshold voltage zero-gate voltage drain current on-state drain current (note 2) gate to source leakage forward drain to source on resistance (note 2) forward transconductance (note 2) turn-on delay time rise time turn-off delay time fall time total gate charge (gate to source + gate to drain) gate to source charge gate to drain "miller" charge input capacitance output capacitance reverse transfer capacitance internal drain inductance internal source inductance junction to case junction to ambient symbol bvdss vgs(th) bss !d(on) igss rds(on) 9fs ld(on) tr 'd(off) tf qg(tot) qgs qgd c|ss cqss crss ld ls rojc r9ja test conditions vqs = ov, id = 250ua (figure 10) vgs = vds,ld = 250na vds = rated bvdss, vgs = ov vds = 0-8 x rated bvdss, vgs = ov, tj = 125c vds > ld(on) x rds(on)max. vgs = 1 ov (figure 7) vgs = 2ov vgs = 10v. id = 2.0a (figures 8, 9) vds = 1v id = 3.3a (figure 12) id = 3.5a, rg = 9.112, vg vdd= 175v (figures 17, times are essentially ind temperature vgs = 10v, ld = 3.5a, ig vds = -8v x rated bvd gate charge is essential operating temperature s = 10v, rl = 49i2 18) mosfet switching ependent of operating ref) = 1.5ma, 3s (figures 14, 19, 20) y independent of vgs = ov, vds = 25v, f = 1 .omhz (figure 1 1 ) measured from the drain lead, 5mm (0.2in) from header to center of die measured from the source lead, 5mm (0.2in)from header to source bonding pad modified mosfet symbol showing the internal device inductances free air operation min 400 2.0 - - 3.5 - - 2.9 - - - - - - - - - - - - - typ - - - - - - 0.8 3.5 - - - - 18 11 7.0 700 150 40 5.0 15 - - max - 4.0 25 250 - _100 1.000 - 30 35 55 35 30 - - - - - - 5.0 175 units v v ha ua a na ij s ns ns ns ns nc nc nc pf pf pf nh nh c/w c/w
IRFF330 source to drain diode specifications parameter continuous source to drain current pulse source to drain current (note 3) source to drain diode voltage (note 2) reverse recovery time reverse recovered charge symbol isd 'sdm vsd |rr qrr test conditions modified mosfet symbol showing the integral reverse p-n junction rectifier. d < .^ s i ^) i tj = 25c, isd = 3.5a, vgs = 0v (figure 13) tj = 150c, isd = 3.5a, dlso/dt = 100a/|is tj = 150c, isd = 3.5a, dlso/dt = 100a/|o.s min - - - - typ - - 600 4.0 max 3.5 14 1.6 - - units a a v ns uc notes: 2. pulse test: pulse width < 300ns, duty cycle < 2%. 3. repetitive rating: pulse width limited by max junction temperature. see transient thermal impedance curve (figure 3). 4. vdd = 50v, start tj = 25c, l = 42.85mh, rg = 25il, peak ias = 3.5a (figures 14,15). typical performance curves umess otherwise specified tt uj in power dissipation multipl o p p o - :> io -u o> bo c x,^ \^ \j cc 02 o: q 50 100 tc, case temperature (c) 150 25 50 75 100 125 tc, case temperature (c) 150 figure 1. normalized power dissipation vs case temperature figure 2. maximum continuous drain current vs case temperature notes: duty factor: d = t-i/t2 tj = pdm * z6jc(?) rectangular pulse duration (lc) figure 3. normalized maximum transient thermal impedance
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